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Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices

Gilbertson, A. M., Fearn, M., Kormanyos, A., Read, Daniel, Lambert, C. J., Emeny, M. T., Ashley, T., Solin, S. A. and Cohen, L. F. 2011. Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices. Physical Review B: Condensed Matter and Materials Physics 83 (7) , 075304. 10.1103/PhysRevB.83.075304

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We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: 10 pages.
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 04 Jun 2017 03:05

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