Room temperature quantum emitters in aluminum nitride epilayers on silicon

Cannon, Joseph K., Bishop, Sam G., Eggleton, Katie M., Yagci, Huseyin B. ORCID: https://orcid.org/0000-0002-8992-2292, Clark, Rachel N., Ibrahim, Sherif R., Hadden, John P. ORCID: https://orcid.org/0000-0001-5407-6754, Ghosh, Saptarsi, Kappers, Menno J., Oliver, Rachel A. and Bennett, Anthony J. ORCID: https://orcid.org/0000-0002-5386-3710 2024. Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters 124 (24) , 244001. 10.1063/5.0207744

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Abstract

Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	EPSRC, European Union
Date of First Compliant Deposit:	14 June 2024
Date of Acceptance:	26 May 2024
Last Modified:	01 Jul 2024 10:45
URI:	https://orca.cardiff.ac.uk/id/eprint/169813

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