Achieving O-band InAs quantum dot laser operation at 200 °C

Mishra, P., Jarvis, L., Hodges, C. ORCID: https://orcid.org/0000-0002-4993-4547, Enderson, A., Albeladi, F., Gillgrass, S. J., Forrest, R., Allford, C. P. ORCID: https://orcid.org/0000-0002-3798-9014, Deng, H., Tang, M., Liu, H., Shutts, S. ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC), Orlando, FL, USA, 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE, pp. 1-2. 10.1109/islc57752.2024.10717409

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Abstract

We demonstrate O-band InAs quantum dot laser operation up to 202 °C. A Fabry Perot laser device with as-cleaved facets and a co-doped scheme within the active region enables ultra-high temperature laser operation without requiring high-reflective facet coatings.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	979-8-3503-7299-1
Last Modified:	22 Nov 2024 22:21
URI:	https://orca.cardiff.ac.uk/id/eprint/173651

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