1390 nm GaAs-based dilute nitride VCSELs on 150 mm wafers for scalable production

Obuseli, I. O. F., Allford, C. P. ORCID: https://orcid.org/0000-0002-3798-9014, Gillgrass, S., Baker, J., Nunna, K., Clark, A., Davies, J. I., Shutts, S. ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842 2026. 1390 nm GaAs-based dilute nitride VCSELs on 150 mm wafers for scalable production. Optics Express 34 , pp. 19865-19877. 10.1364/OE.595959

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Abstract

We report the development of dilute nitride vertical-cavity surface-emitting lasers emitting near 1390 nm, grown by molecular beam epitaxy on 150 mm GaAs substrates. DN alloys provide a promising alternative to InP-based materials for long-wavelength laser applications above 1300 nm. Devices with oxide apertures ranging from 3 to 7 μm were characterised. Photovoltage spectroscopy was employed to investigate the spectral mismatch between the cavity resonance and the quantum well absorption edge. Near-field beam profiles revealed evidence of thermal lensing, highlighting the impact of self-heating on lasing characteristics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Optica Publishing Group
ISSN:	1094-4087
Funders:	EPSRC
Projects:	EP/Z532848/1, EP/P030556/1, EP/S024441/1
Date of First Compliant Deposit:	30 June 2026
Last Modified:	18 Aug 2026 09:53
URI:	https://orca.cardiff.ac.uk/id/eprint/187836

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