Third-harmonic generation imaging of local doping, mechanical stress, and stray electric fields in silicon microchips [Letter]

Bandarenka, Hanna ORCID: https://orcid.org/0000-0003-4254-8261, Adinehloo, Davoud, Oskolkov, Evgenii, Kuzmin, Andrey, Pliss, Artem, Shaibu, Onoruoiza David, Bird, Jonathan, Baev, Alexander, Perebeinos, Vasili and Prasad, Paras N. 2025. Third-harmonic generation imaging of local doping, mechanical stress, and stray electric fields in silicon microchips [Letter]. ACS Photonics 12 (5) , pp. 2304-2310. 10.1021/acsphotonics.4c01924

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Abstract

We employ third-harmonic generation (THG) imaging for noninvasive characterization of silicon wafers and microchips and demonstrate that a much higher contrast can be achieved in THG compared to reflection imaging. In particular, the THG signal clearly distinguishes between n-type and p-type silicon samples coated with native silicon dioxide, which were indistinguishable in the reflection imaging mode. The THG response showed a higher contrast in mechanically stressed samples and under in-plane electric fields. Our experimental results, supported by first-principles calculations, demonstrate that THG imaging is a robust tool for assessing doping, mechanical stress, and electric fields in silicon-based structures, offering significant potential for advanced semiconductor diagnostics and the development of next-generation electronic components.

Item Type:	Short Communication
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	2330-4022
Date of Acceptance:	11 April 2025
Last Modified:	07 Sep 2026 21:51
URI:	https://orca.cardiff.ac.uk/id/eprint/188413

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