Porous silicon technology, a breakthrough for silicon photonics: From packaging to monolithic integration

Balucani, M., Klyshko, A., Kholostov, K., Benedetti, A., Belardini, A., Sibilia, C., Izzi, M., Tucci, M., Bandarenka, H. ORCID: https://orcid.org/0000-0003-4254-8261 and Bondarenko, V. 2014. Porous silicon technology, a breakthrough for silicon photonics: From packaging to monolithic integration. Presented at: 2014 IEEE 64th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA, 27-30 May 2014. 2014 IEEE 64th Electronic Components and Technology Conference (ECTC) Proceedings. IEEE, pp. 194-202. 10.1109/ECTC.2014.6897288

Full text not available from this repository.

Abstract

Low cost concept based on the porous silicon technology is shown to be well suitable for integrating monolithically the photonic devices on a standard silicon wafers by using localized SOI structures fabricated by electrochemical anodization of silicon wafers followed by thermal oxidation of porous silicon. The new approach consists in realizing buried localized porous oxidized silicon by exploiting two different routes: n- epi/n+/n- structures on p-type wafers and ion-implantation on standard CMOS/BiCMOS wafers. The peculiarities of the developed approach, including anodization and thermal oxidation regimes to form oxidized porous silicon regions with the required properties are presented. The advantages of the proposed approach in realizing the fiber-to-chip and power-over-fiber coupling are discussed.

Item Type:	Conference or Workshop Item - published (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	IEEE
ISBN:	9781479924080
ISSN:	0569-5503
Last Modified:	07 Sep 2026 21:56
URI:	https://orca.cardiff.ac.uk/id/eprint/188574

Actions (repository staff only)

Edit Item