Single quantum emitters in gallium nitride

Cannon, Joseph, Eggleton, Katie M., Guo, Yanzhao, Zhao, Chunyu, Ghosh, Saptarsi, Kappers, Menno J, Oliver, Rachel A, Hadden, J.P. ORCID: https://orcid.org/0000-0001-5407-6754 and Bennett, Anthony J. ORCID: https://orcid.org/0000-0002-5386-3710 2026. Single quantum emitters in gallium nitride. Materials for Quantum Technology 10.1088/2633-4356/aea513

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Abstract

Gallium nitride (GaN) quantum emitters have rapidly emerged as a promising platform for room-temperature single-photon generation, benefiting from high emission rates, robust optical properties, and compatibility with industrial GaN epitaxy and device fabrication. Over the past decade, these emitters have demonstrated bright, linearly polarized emission, strong antibunching without tight spectral filtering, and in some cases microwave and magnetically addressable spin transitions, highlighting their potential for quantum communication, sensing, and integrated photonics. In this Perspective, we consolidate recent progress in understanding the formation, control, and photophysical behaviour of GaN quantum emitters, including advances in controlled epitaxy, activation techniques, and external-field tuning. We further discuss outstanding questions surrounding their microscopic origin and spectral variability, and identify key challenges related to spectral stability, spin coherence, and device integration. Finally, we outline the most promising research directions and technological pathways that could enable scalable, low-cost, room-temperature quantum light sources based on GaN.

Item Type:	Article
Date Type:	Publication
Status:	In Press
Schools:	Schools > Engineering
Publisher:	IOP Publishing
Date of First Compliant Deposit:	14 September 2026
Date of Acceptance:	9 September 2026
Last Modified:	14 Sep 2026 20:45
URI:	https://orca.cardiff.ac.uk/id/eprint/189583

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