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Stoichiometry effects and the Moss-Burstein effect for InN

Butcher, K. S. A., Hirshy, Hassan ORCID:, Perks, Richard Marc ORCID:, Wintrebert-Fouquet, M. and Chen, P. P.-T. 2006. Stoichiometry effects and the Moss-Burstein effect for InN. Physica status solidi (a) 203 (1) , pp. 66-74. 10.1002/pssa.200563504

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We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
ISSN: 1521-396X
Last Modified: 17 Oct 2022 09:04

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