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Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers

Shutts, Samuel ORCID:, Edwards, Gareth, Elliott, Stella, Smowton, Peter Michael ORCID: and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. SPIE Proceedings , vol.7953 (7953) Bellingham, WA: IEEE, p. 795308. 10.1117/12.876454

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By optimising an InP/AlGaInP quantum dot size distribution a broad and relatively flat topped gain spectra can be achieved. Using the segmented contact method we measure the optical gain spectra and use this to explain the range of lasing wavelengths that can obtained by varying the grating structure of deep etched DBR lasers. We describe the optimisation of a simple single stage ICP etch process suitable for producing anisotropic microstructures in this material system and the resulting deep-etched DBR lasers. Measurements of emission wavelength made between 220 and 320 K on a ridge laser, fabricated with cleaved facets, reveals a temperature dependence on of 0.14 nm/K. DBR structures have been used to improve this behaviour, with a dependence of peak wavelength with temperature of 0.07 nm/K, over the same temperature range. Measurements on a 4 μm wide DBR ridge laser show they can be operated up to 17 nm from the peak emission of a ridge laser operating at the same current density.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 9780819484901
ISSN: 0277-786X
Last Modified: 19 Oct 2022 10:01

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