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The lateral ambipolar diffusion length in quantum dot lasers

Sobiesierski, Angela, Naidu, Deepal and Smowton, Peter Michael ORCID: 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. Proceedings of SPIE , vol.7953 Bellingham, WA: The International Society for Optical Engineering, p. 795306. 10.1117/12.874474

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Using the segmented contact technique we determine the lateral out-diffusion current in shallow etched quantum dot ridges of different width and by fitting this out-diffusion data we obtain the ambipolar diffusion length as a function of the intrinsic carrier injection level. The measured data reveals two regimes of reduced diffusion that can be explained by a mechanism involving the thermal redistribution of carriers via the wetting layer. In a high performance 5 layer quantum dot structure operated at 350K the diffusion length varies between 0.75 and 1.5 μm as the peak modal gain increases from 5 to 11cm-1. In dot-in-well quantum dot samples fabricated into deep etched ridge lasers we demonstrate the improved performance and reduced ridge-width dependence of threshold current density as compared to quantum well material, which is identical except for the presence of the dots and wetting layer. For example in 6μm wide, 1500 μm long quantum dot ridges at 300K the threshold current density is 41% of that of the corresponding quantum well ridge. Furthermore, at 230K the threshold current density of the 6 μm ridge increases by a factor of 1.1 as compared to similar 20μm wide ridges whereas in quantum well ridge lasers the threshold current density increases by a factor of 3.2 for the same pair of ridge widths. This corresponds to a threefold decrease in the ridge width dependence of QD ridge lasers compared to QW based lasers. This different dependence on ridge width corresponds to the different lateral diffusion characteristics of the quantum well and self assembled quantum dot material.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: The International Society for Optical Engineering
ISBN: 9780819484901
ISSN: 0277-786X
Last Modified: 19 Oct 2022 10:07

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