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Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

Bates, R., Lynch, Stephen Anthony ORCID:, Paul, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Liew, S. L., Norris, D. J., Cullis, A. G., Tribe, W. R. and Arnone, D. D. 2003. Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters. Applied Physics Letters 83 (20) , 4092. 10.1063/1.1626003

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The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: 3 Page Article. Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 08 May 2023 05:21

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