Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Si-based electroluminescence at THz frequencies

Lynch, Stephen Anthony ORCID:, Dhillon, S. S., Bates, R., Paul, D. J., Arnone, D. D., Robbins, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Cullis, A. G., Pidgeon, C. R., Murzyn, P. and Loudon, A. 2002. Si-based electroluminescence at THz frequencies. Materials Science and Engineering: B 89 (1-3) , pp. 10-12. 10.1016/S0921-5107(01)00782-6

Full text not available from this repository.


Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Silicon; Germanium; Quantum effects; Luminescence
Publisher: Elsevier
ISSN: 0921-5107
Last Modified: 19 Oct 2022 10:43

Citation Data

Cited 26 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item