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Si/SiGe quantum-cascade emitters for terahertz applications

Paul, D. J., Lynch, Stephen Anthony ORCID:, Bates, R., Ikonić, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Liew, S. L., Cullis, A. G., Arnone, D. D., Pidgeon, C. R., Murzyn, P., Wells, J.-P. R. and Bradley, I. V. 2003. Si/SiGe quantum-cascade emitters for terahertz applications. Physica E: Low-dimensional Systems and Nanostructures 16 (1) , pp. 147-155. 10.1016/S1386-9477(02)00590-8

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The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at ( wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of below .

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Si/SiGe; Intersubband; Electroluminescence; Quantum cascade
Additional Information: Proceedings of the Twelfth International Winterschool on New Developments in Solids State Physics, "Low- Dimensional Systems: From 2D to Molecules"
Publisher: Elsevier
ISSN: 1386-9477
Last Modified: 19 Oct 2022 10:43

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