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THz intersubband dynamics in p-Si/SiGe quantum well structures

Pidgeon, C. R., Murzyn, P., Wells, J.-P. R., Bradley, I. V., Ikonic, Z., Kelsall, R. W., Harrison, P., Lynch, Stephen Anthony ORCID:, Paul, D. J., Arnone, D. D., Robbins, D. J., Norris, D. and Cullis, A. G. 2002. THz intersubband dynamics in p-Si/SiGe quantum well structures. Physica E: Low-dimensional Systems and Nanostructures 13 (2-4) , pp. 904-907. 10.1016/S1386-9477(02)00231-X

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We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω<ℏωLO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump–probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of . This is found to be approximately constant in the temperature range from 4 to , in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Si/SiGe; Intersubband absorption; Alloy scattering
Publisher: Elsevier
ISSN: 1386-9477
Last Modified: 19 Oct 2022 10:43

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