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THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

Pidgeon, C. R., Murzyn, P., Wells, J-P. R., Ikonic, Z., Kelsall, R. W., Harrison, P., Lynch, Stephen Anthony ORCID:, Paul, D. J., Arnone, D. D. and Robbins, D. J. 2003. THz intersubband dynamics in p-Si/SiGe quantum well emitter structures. physica status solidi (b) 237 (1) , pp. 381-385. 10.1002/pssb.200301784

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We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ħω < ħωLO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: 84.40.–x
Publisher: Wiley
ISSN: 0370-1972
Last Modified: 19 Oct 2022 10:43

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