Weak localization in ultrananocrystalline diamond

Mareš, J. J., Hubík, P., Krištofik, J., Kindl, D., Fanta, M., Nesládek, M., Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004 and Gruen, D. M. 2006. Weak localization in ultrananocrystalline diamond. Applied Physics Letters 88 (9) , 092107. 10.1063/1.2176853

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Abstract

In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity ( ∼ 4200 S m−1) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28 K and at 8 T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 20/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	21 May 2023 04:20
URI:	https://orca.cardiff.ac.uk/id/eprint/35818

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