Development of an RF IV waveform based stress test procedure for use on GaN HFETs

McGenn, William, Uren, Michael J., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2012. Development of an RF IV waveform based stress test procedure for use on GaN HFETs. Microelectronics Reliability 52 (12) , pp. 2880-2883. 10.1016/j.microrel.2012.09.007

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Abstract

This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress. RF waveform measurements showed that the exact change in the RF load line induced during RF degradation cannot be directly inferred from the DC or low power RF measurement. The RF degradation takes the form of a knee-walkout, a small pinch-off shift consistent with charge trapping and defect generation, and in addition gate leakage occurs once the RF voltage exceeds a critical voltage.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	Elsevier
ISSN:	0026-2714
Last Modified:	24 Oct 2022 10:25
URI:	https://orca.cardiff.ac.uk/id/eprint/44203

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