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A surface X-ray diffraction study of the Si(111)?Pb-buried interface

Howes, P. B., Edwards, K. A., Hughes, D. J., MacDonald, John Emyr ORCID:, Hibma, T, Bootsma, T and James, M. A 1995. A surface X-ray diffraction study of the Si(111)?Pb-buried interface. Surface Science 331-33 (A) , pp. 646-650. 10.1016/0039-6028(95)00382-7

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The absence of interdiffusion and chemical reaction at the Si(111)Pb interface makes it an attractive prototypical system for studying metal-semiconductor interface formation. Of particular interest is the fact that the surface reconstruction in the early stages of growth influences the Schottky barrier height of Si(111)Pb diodes. In this paper we present surface X-ray diffraction studies of the buried interfaces which reveal structural differences which correlate with the known electronic properties. In situ studies of the early stages of growth at 85 K are also presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Lead; Low index single crystal surfaces; Schottky barrier; Silicon
Publisher: Elsevier
ISSN: 0039-6028
Last Modified: 24 Oct 2022 10:48

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