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Analysis of terahertz-emitting SiGe quantum cascade structures by transmission electron microscopy

Liew, S. L., Norris, D. J., Cullis, A. G., Kelsall, R. W., Harrison, P., Ikonic, Z., Paul, D. J., Lynch, Stephen Anthony ORCID:, Bates, R., Arnone, D. D. and Robbins, D. J. 2003. Analysis of terahertz-emitting SiGe quantum cascade structures by transmission electron microscopy. Presented at: Microscopy of semiconducting materials 2003, Cambridge, UK, 31 March - 3 April 2003. Published in: Cullis, A. G. and Midgley, P. A. eds. Microscopy of semiconducting materials 2003: proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003. Institute of Physics Conference Series (180) Bristol: IOP Publishing, pp. 155-158.

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We have performed a detailed transmission electron microscopy study of SiGe quantum cascade devices designed to operate in the THz band. Test structures have been grown onto SiGe virtual substrates, with the first being to identify the effect on quantum well morphology of increasing Ge concentration (or strain). We have used a combination of energy dispersive X-ray microanalysis, electron energy-loss imaging and scanning transmission electron microscopy to measure the compositions of the various quantum wells. These are subsequently correlated with the roughness of final quantum-well morphology. We find that in virtual substrates with a 20% Ge concentration within the SiGe alloy of the surface buffer layer, quantum wells with a Ge concentration up to similar to35% can be grown before morphological buckling occurs

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISBN: 9780750309790
Last Modified: 24 Oct 2022 10:50

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