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Terahertz intersubband emission from silicon-germanium quantum cascades

Kelsall, R. W., Ikonic, Z., Harrison, Paul, Lynch, Stephen Anthony, Bates, R., Paul, D. J., Norris, D. J., Liew, San Lin, Cullis, A. G., Robbins, D. J., Murzyn, P., Pidgeon, C. R. and Arnone, D. D. 2002. Terahertz intersubband emission from silicon-germanium quantum cascades. Presented at: IEEE Tenth International Conference on Terahertz Electronics, Cambridge, UK, 9-10 September 2002. Published in: Chamberlain, J. M., Davies, A. G., Harrison, P., Linfield, E. H., Miles, R. E. and Withington, S. eds. Proceedings of the Tenth International Conference on Terahertz Electronics. Warrandale, MA: IEEE, pp. 9-12. 10.1109/THZ.2002.1037575

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Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 0780376307
Last Modified: 04 Jun 2017 04:53

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