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Terahertz intersubband emission from silicon-germanium quantum cascades

Kelsall, R. W., Ikonic, Z., Harrison, Paul, Lynch, Stephen Anthony ORCID:, Bates, R., Paul, D. J., Norris, D. J., Liew, San Lin, Cullis, A. G., Robbins, D. J., Murzyn, P., Pidgeon, C. R. and Arnone, D. D. 2002. Terahertz intersubband emission from silicon-germanium quantum cascades. Presented at: IEEE Tenth International Conference on Terahertz Electronics, Cambridge, UK, 9-10 September 2002. Published in: Chamberlain, J. M., Davies, A. G., Harrison, P., Linfield, E. H., Miles, R. E. and Withington, S. eds. Proceedings of the Tenth International Conference on Terahertz Electronics. Warrandale, MA: IEEE, pp. 9-12. 10.1109/THZ.2002.1037575

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Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 0780376307
Last Modified: 24 Oct 2022 10:50

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