Vlieg, E., van der Gon, A., van der Veen, J., MacDonald, John Emyr ![]() |
Official URL: http://dx.doi.org/10.1103/PhysRevLett.61.2241
Abstract
The growth of Ge on Ge(111) has been monitored by in situ x-ray reflectivity and diffraction. For suitably chosen geometries, the scattered x-ray intensity is extremely sensitive to atomic-scale surface morphology; dramatic intensity changes occur upon deposition of a fraction of a monolayer. For substrate temperatures up to 200°C oscillations are observed in the scattered intensity, indicating growth by two-dimensional nucleation. Reflectivity curves reveal the detailed surface atomic geometry. All observations can be quantitatively understood by use of kinematical diffraction theory.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | American Physical Society |
ISSN: | 0031-9007 |
Last Modified: | 24 Oct 2022 10:51 |
URI: | https://orca.cardiff.ac.uk/id/eprint/46153 |
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