The initial stages of growth of Ge on Si(001) studied by X-ray diffraction

Williams, A. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, van Silfhout, R. G., van der Veen, J. F., Johnson, A. D. and NorriS, C. 1989. The initial stages of growth of Ge on Si(001) studied by X-ray diffraction. Journal of Physics: Condensed Matter 1 (Supp B) , SB273-SB274. 10.1088/0953-8984/1/SB/073

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Abstract

The structure of an ultra-thin epitaxial Ge layer during in situ deposition onto a Si(001) surface has been investigated. Peaks arising from the 2*1 reconstruction disappear at a coverage of approximately=ML. The layer is epitaxial with respect to the substrate up to a coverage of approximately=5 Ml, beyond which the strained layer relaxes gradually. At a coverage of 10 ML the lateral strain is reduced to 2.2% compared with 4.0% in the unrelaxed layer.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	0953-8984
Last Modified:	24 Oct 2022 11:21
URI:	https://orca.cardiff.ac.uk/id/eprint/47808

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