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Excitons in CdS and CdSe semiconducting quantum wires with dielectric barriers

Dneprovskii, V. S., Zhukov, E. A., Shalygina, O. A., Lyaskovskii, V. L., Muljarov, Egor A. ORCID:, Gavrilov, S. A. and Masumoto, Y. 2002. Excitons in CdS and CdSe semiconducting quantum wires with dielectric barriers. Journal of Experimental and Theoretical Physics 94 (6) , pp. 1169-1175. 10.1134/1.1493169

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Features of the photoluminescence spectra observed for various polarizations and intensities of the pumping radiation and the kinetics of photoluminescence of the CdS and CdSe nanocrystals grown in hollow nanochannels of an Al2O3 matrix are explained in terms of exciton transitions in semiconducting quantum wires with dielectric barriers. The observed exciton transition energies coincide with the values calculated with an allowance for the effects of quantum confinement and the “dielectric enhancement” of excitons. The latter effect is manifested by a significant increase in the Coulomb attraction between electrons and holes (the exciton binding energy exceeds 100 meV) due to a difference between the permittivities of semiconductor and insulator. It is shown that the exciton transition energy remains constant when the quantum wire diameter varies within broad limits. This is related to the fact that a growth in the one-dimensional bandgap width of the quantum wire caused by a decrease in the diameter is compensated by an increase in the exciton binding energy.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Publisher: Springer Link
ISSN: 1063-7761
Last Modified: 24 Oct 2022 11:32

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