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Optical properties of excitons in semiconductor (InP)-insulator quantum wires

Dneprovskii, V. S., Zhukov, E. A., Markova, N. Yu., Muljarov, Egor A. ORCID:, Chernoutsan, K. A. and Shalygina, O. A. 2000. Optical properties of excitons in semiconductor (InP)-insulator quantum wires. Physics of the Solid State 42 (3) , pp. 544-547. 10.1134/1.1131246

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Features in the spectra of absorption, luminescence, and luminescence efficiency obtained under sample excitation with differently polarized laser radiation, and the nonlinear dependence of the luminescence intensity on the excitation level are explained as due to excitonic transitions in semiconductor (InP)-insulator (chrysotile asbestos) quantum wires. The measured excitonic-transition energies in the quantum wires are in quantitative agreement with calculations. The calculations took into account both the size quantization in a quasi-one-dimensional structure and the “dielectric enhancement” of excitons (the noticeable increase of the exciton binding energy and of the excitonic-transition oscillator strength associated with the increased attraction between the electron and the hole due to the large difference between the dielectric permittivities of the semiconductor and the dielectric matrix).

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Publisher: Springer
ISSN: 1063-7834
Last Modified: 24 Oct 2022 11:33

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