Muljarov, Egor A. ![]() |
Abstract
Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole states (specifically, excitation lines of excitons formed by an electron localized in a QW and a free heavy hole) have been observed in the photoluminescence excitation spectra of GaAs/Al0.05Ga0.95As structures with quantum wells (QWs), each containing one single-particle size-quantization level for charge carriers of each type. A computational method is proposed that permits finding the binding energy and wave functions of excitons in QWs taking the Coulomb potential into account self-consistently. The computed values of the excitonic transition energies agree quite well with the experimental results.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QB Astronomy |
Publisher: | Nauka/Interperiodica |
ISSN: | 0021-3640 |
Last Modified: | 24 Oct 2022 11:33 |
URI: | https://orca.cardiff.ac.uk/id/eprint/48558 |
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