Excitonic state in quantum wells formed from "above-barrier" electronic states

Muljarov, Egor A. ORCID: https://orcid.org/0000-0002-2878-4148, Sibel'din, N. N., Skorikov, M. L., Tsvetkov, V. A. and Etienne, B. 1999. Excitonic state in quantum wells formed from "above-barrier" electronic states. JETP Letters 70 (9) , pp. 621-627. 10.1134/1.568225

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Abstract

Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole states (specifically, excitation lines of excitons formed by an electron localized in a QW and a free heavy hole) have been observed in the photoluminescence excitation spectra of GaAs/Al0.05Ga0.95As structures with quantum wells (QWs), each containing one single-particle size-quantization level for charge carriers of each type. A computational method is proposed that permits finding the binding energy and wave functions of excitons in QWs taking the Coulomb potential into account self-consistently. The computed values of the excitonic transition energies agree quite well with the experimental results.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy
Publisher:	Nauka/Interperiodica
ISSN:	0021-3640
Last Modified:	24 Oct 2022 11:33
URI:	https://orca.cardiff.ac.uk/id/eprint/48558

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