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Optical properties of excitons in CdS semiconductor-insulator quantum wires

Gavrilov, S. A., Gusev, V. V., Dneprovskii, V. S., Zhukov, E. A., Syrnikov, A. N., Yaminskii, I. V. and Muljarov, Egor A. ORCID: 1999. Optical properties of excitons in CdS semiconductor-insulator quantum wires. Journal of Experimental and Theoretical Physics Letters 70 (3) , pp. 216-221. 10.1134/1.568155

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The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the “dielectric enhancement of excitons” — the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Uncontrolled Keywords: 78.66.Hf, 78.55.Et,71.35.Cc
Publisher: Nauka
ISSN: 0021-3640
Last Modified: 24 Oct 2022 11:33

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