Optical properties of excitons in CdS semiconductor-insulator quantum wires

Gavrilov, S. A., Gusev, V. V., Dneprovskii, V. S., Zhukov, E. A., Syrnikov, A. N., Yaminskii, I. V. and Muljarov, Egor A. ORCID: https://orcid.org/0000-0002-2878-4148 1999. Optical properties of excitons in CdS semiconductor-insulator quantum wires. Journal of Experimental and Theoretical Physics Letters 70 (3) , pp. 216-221. 10.1134/1.568155

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Abstract

The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the “dielectric enhancement of excitons” — the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy
Uncontrolled Keywords:	78.66.Hf, 78.55.Et,71.35.Cc
Publisher:	Nauka
ISSN:	0021-3640
Last Modified:	24 Oct 2022 11:33
URI:	https://orca.cardiff.ac.uk/id/eprint/48561

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