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Isotope effect on the lifetime of the 2p0 state in phosphorus-doped silicon

Hübers, H.-W., Pavlov, S. G., Lynch, Stephen Anthony, Greenland, Th., Litvinenko, K. L., Murdin, B., Redlich, B., van der Meer, A. F. G., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H.-J., Zhukavin, R. Kh. and Shastin, V. N. 2013. Isotope effect on the lifetime of the 2p0 state in phosphorus-doped silicon. Physical Review B: Condensed Matter and Materials Physics 88 (3) , 035201. 10.1103/PhysRevB.88.035201

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Abstract

The low-temperature (∼5 K) phonon-assisted relaxation of the 2p0 state of phosphorus donors in isotopically pure, monocrystalline 28Si has been studied in the time domain using a pump-probe technique. The lifetime of the 2p0 state in 28Si:P is found to be 235 ps, which is 16% larger than the lifetime of a reference Si:P sample with a natural isotope composition. The interaction of the 2p0 state with intervalley g-type longitudinal acoustic and f-type transverse acoustic phonons determines its lifetime. This interaction, which depends on the homogeneity of the crystal, becomes weaker in 28Si because of its more perfect crystal lattice compared to natural Si, and this leads to a longer lifetime. The difference between the linewidths of the 1s(A1) → 2p0 transition in 28Si:P and natural Si:P is more than a factor of two. It follows that linewidth broadening due to isotopic composition is an inhomogeneous process.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 04 Jun 2017 05:11
URI: https://orca.cardiff.ac.uk/id/eprint/49443

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