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Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

Astrov, Yu. A., Lynch, Stephen Anthony ORCID:, Shuman, V. B., Portsel, L. M., Makhova, A. A. and Lodygin, A. N. 2013. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy. Semiconductors 47 (2) , pp. 247-251. 10.1134/S1063782613020048

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The effect of the high-temperature heating (at 1340°C) of sulfur-doped silicon samples and their subsequent quenching is studied. The results of such a treatment are analyzed on the basis of Hall-effect data obtained in the temperature range T = 78–500 K. It is shown that the heating duration strongly affects the relative concentrations of different types of deep sulfur-related centers. At comparatively short heating durations of t = 2–10 min, the concentration of quasi-molecular S2 centers and S X complexes substantially decreases, whereas the density of monoatomic S1 centers grows. At the same time, the heating of a sample is accompanied by a monotonic decrease in the total concentration of electrically active sulfur over time. The results obtained make it possible to give recommendations concerning the optimal conditions for the fabrication of samples with a high concentration of S1 centers. The absorption spectra of the samples show that the method is promising for the observation of a number of quantum-optical effects involving deep S1 donors in silicon.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Springer
ISSN: 1063-7826
Last Modified: 24 Oct 2022 11:49

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