Influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Pioro-Ladrière, M., Usher, A., Sachrajda, A., Lapointe, J., Gupta, J., Wasilewski, Z., Studenikin, S. and Elliott, Martin ORCID: https://orcid.org/0000-0002-9254-9898 2006. Influence of the long-lived quantum Hall potential on the characteristics of quantum devices. Physical Review B: Condensed Matter and Materials Physics 73 , 075309-1-075309-5. 10.1103/PhysRevB.73.075309

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Abstract

Hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same two-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the transport properties of all lateral devices, subjected to quantizing magnetic fields.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	1098-0121
Last Modified:	25 Oct 2022 09:39
URI:	https://orca.cardiff.ac.uk/id/eprint/59499

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