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The effect of p doping in InAs quantum dot lasers

Sandall, I. C., Smowton, Peter Michael ORCID:, Walker, C. L., Badcock, T., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2006. The effect of p doping in InAs quantum dot lasers. Applied Physics Letters 88 (11) , 111113. 10.1063/1.2186078

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We directly measure the modal gain and spontaneous emission spectra in three quantum dot structures that are nominally identical except for the level of pdoping to ascertain the effect that pdoping has on quantum dot lasers. The maximum modal gain increases at fixed quasi-Fermi level separation as the level of pdoping increases from 0 to 15 to 50 acceptors per dot. The internal optical mode loss is similar for all three samples but the measured nonradiative current is larger for the p-doped structures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 25 Oct 2022 09:39

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