Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells

Orani, D., Polimeni, A., Patane, A., Capizzi, M., Martelli, F., D'Andrea, A., Tomassini, N., Borri, Paola, Gurioli, M. and Colocci, M. 1997. Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells. Physica Status Solidi (a) 164 (1) , pp. 107-110. 10.1002/1521-396x(199711)164:1<107::aid-pssa107>;2-8

Full text not available from this repository.


We report a systematic study of exciton binding energies and lifetimes in InGaAs/GaAs quantum wells. The experimental binding energies have been deduced from photoluminescence excitation measurements taking into account the contribution of the 2s state of the exciton and the line broadening. The experimental results have been compared with accurate calculations in a four-band model, where exciton energies take into account the polaron correction. The theory accounts for all the experimental observations and provides a good quantitative agreement with the experimental values.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 0031-8965
Last Modified: 02 May 2019 11:19

Citation Data

Cited 10 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item