Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Exciton formation and relaxation in GaAs epilayers

Gurioli, M., Borri, Paola, Colocci, M., Gulia, M., Rossi, F., Molinari, E., Selbmann, P. and Lugli, P. 1998. Exciton formation and relaxation in GaAs epilayers. Physical Review B 58 (20) , R13403-R13406. 10.1103/PhysRevB.58.R13403

Full text not available from this repository.


Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 02 May 2019 11:19

Citation Data

Cited 34 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item