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Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells

Borri, Paola ORCID:, Langbein, Wolfgang Werner ORCID:, Hvam, J. M. and Martelli, F. 1999. Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells. Physical Review B 60 (7) , pp. 4505-4508. 10.1103/PhysRevB.60.4505

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Biexciton binding energies and biexciton dephasing in In0.18Ga0.82As/GaAs single quantum wells have been measured by time-integrated and spectrally resolved four-wave mixing. The biexciton binding energy increases from 1.5 to 2.6 meV for well widths increasing from 1 to 4 nm. The ratio between exciton and biexciton binding energy changes from 0.23 to 0.3 with increasing inhomogeneous broadening, corresponding to increasing well width. From the temperature dependence of the exciton and biexciton four-wave mixing signal decay, we have deduced the acoustic-phonon scattering of the exciton-biexciton transition. It is found to be comparable to that of the exciton transition, indicating that the deformation potential interactions for the exciton and the exciton-biexciton transitions are comparable.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 25 Oct 2022 09:43

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