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Semiconductor quantum-dot lasers and amplifiers

Hvam, Jorn M., Borri, Paola, Ledentsov, Nikolai N. and Bimberg, Dieter 2002. Semiconductor quantum-dot lasers and amplifiers. Presented at: Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, Boston, MA, 29-30 July 2002. Published in: Mirin, Richard P. and Menoni, Carmen S. eds. Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems. SPIE Proceedings Series , vol. 4871. Bellingham, WA: SPIE, pp. 130-140. 10.1117/12.457282

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We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mum with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 mum, both high-power edge emitters and low-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: mu-m emission; optical-properties; differential gain; gaas; ingaas; threshold; injection; growth; temperature; relaxation
Publisher: SPIE
ISBN: 0819446505
ISSN: 0277-786X
Last Modified: 02 May 2019 11:23

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