Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors

Chaudhary, M. A, Memon, Z. A., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2013. Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors. Presented at: 2013 16th International Multi Topic Conference (INMIC), Lahore, Pakistan, 19-20 December 2013. Multi Topic Conference (INMIC), 2013 16th International. IEEE, pp. 106-109. 10.1109/INMIC.2013.6731333

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Abstract

The inter-modulation distortion products vary in amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variations and looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. Here, the investigations are carried out on 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to quantify the role of baseband impedances on observed hysteresis in the dynamic transfer characteristics. Analysis is performed in envelope domain in order to more effectively reveal the DDT's sensitivity to electrical baseband memory effects.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	IEEE
Last Modified:	27 Oct 2022 10:04
URI:	https://orca.cardiff.ac.uk/id/eprint/68812

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