Microwave detection of photodielectric effects in antimony tin oxide

Cuenca, Jerome ORCID: https://orcid.org/0000-0003-1370-1167, Choi, Heungjae ORCID: https://orcid.org/0000-0003-1108-293X, Hartley, Jon and Porch, Adrian ORCID: https://orcid.org/0000-0001-5293-8883 2014. Microwave detection of photodielectric effects in antimony tin oxide. Presented at: 2014 International Symposium on Information Technology Convergence (ISITC 2014), Jeonju, Republic of Korea, 30-31 October 2014.

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Abstract

The photodielectric effect in antimony-doped tin oxide (Sb:SnO2) was observed by using the microwave cavity perturbation method. The results show that the dielectric constant and the losses change upon a long 30 second exposure of 365nm irradiation. On turning off the irradiation, the dielectric constant and losses tend back towards their dark state values though never reach their starting value implying evidence of some permanently excited state within the material.

Item Type:	Conference or Workshop Item (Speech)
Date Type:	Completion
Status:	Unpublished
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	Antimony-doped tin oxide, complex permittivity, photodielectric, cavity perturbation.
Last Modified:	15 Jan 2023 14:48
URI:	https://orca.cardiff.ac.uk/id/eprint/69020

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