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Influence of the host lattice on the O-H interaction in II-VI semiconductors

Felici, M., Polimeni, A., Scordo, A., Masia, Francesco, Frova, A., Capizzi, M., Nabetani, Y., Okuno, T., Aoki, K., Kato, T., Matsumoto, T. and Hirai, T. 2007. Influence of the host lattice on the O-H interaction in II-VI semiconductors. Aip Conference Proceedings 893 , pp. 327-328.

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We investigated the optical properties of ZnTe:O before and after atomic H irradiation. The disappearance of all O-induced effects upon hydrogenation is a clear sign of the existence of strong O-H interactions in the material. This behavior strikingly contrasts with that observed in ZnSe1-xOx, where no effect of H irradiation on the large, O-induced band-gap bowing could be observed. These observations point out to the key role played by the host lattice in determining the properties of the isoelectronic O impurity in II-VI semiconductors. In turn, these properties have a deep influence on the strength of O-H interactions in this class of materials.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: AIP
ISSN: 0094-243X
Last Modified: 21 Oct 2017 07:16

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