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Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

Gindele, F., Woggon, U., Langbein, Wolfgang Werner ORCID:, Hvam, J., Leonardi, K., Hommel, D. and Selke, H. 1999. Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures. Physical Review B 60 (12) , pp. 8773-8782. 10.1103/PhysRevB.60.8773

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The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1−xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 28 Oct 2022 08:40

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