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Controlling the magneto-transport properties of EuS thin films

Keller, J., Parker, J. S., Stankiewicz, J., Read, Daniel ORCID:, Stampe, P. A., Kennedy, R. J., Xiong, P. and von Molnar, S. 2002. Controlling the magneto-transport properties of EuS thin films. IEEE Transactions on Magnetics 38 (5) , pp. 2673-2675. 10.1109/TMAG.2002.801977

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The growth of thin films of the ferromagnetic semiconductor EuS on (100) oriented GaAs substrates by electron-beam evaporation is demonstrated. Structural characterization by X-ray diffraction reveals (100) oriented growth. In general, the magnetic and transport properties can strongly be influenced by the deposition parameters. We systematically investigate the influence of the growth temperature Ts in the range Ts = 235 K–675 K on the above properties. The Curie temperature increases with decreasing growth temperature, while the magnetic transition becomes broader. The resistivity decreases over four orders of magnitude with decreasing substrate temperature. The behavior of the magnetic properties and the resistivity can be explained by a change in stoichiometry, leading to higher carrier concentrations for lower substrate temperatures. Hall-effect measurements, magnetoresistance, and temperature dependence of the resistivity show a qualitative behavior known from bulk EuS samples. The demonstrated tunability of the magnetic and transport properties opens a wide range of possible applications for EuS in spin-electronics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Conductivity , Gallium arsenide , Magnetic properties , Magnetic semiconductors , Semiconductor thin films , Substrates , Temperature distribution , Temperature measurement , Transistors , X-ray diffraction
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0018-9464
Last Modified: 17 Oct 2022 10:09

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