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Observation of anomalous Hall effect in thin film EuS

Guilaran, I. J., Read, Daniel ORCID:, Kallaher, R. L., Xiong, P., von Molnar, S., Stampe, P. A., Kennedy, R. J. and Keller, J. 2003. Observation of anomalous Hall effect in thin film EuS. Physical Review -Series B- 68 (14) 10.1103/PhysRevB.68.144424

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We report on a study of the magnetotransport properties of EuS thin films grown by electron-beam deposition on (100) GaAs and (100) Si. The films are naturally doped due to a varying degree of sulfur deficiency. The sulfur deficiency and thus the doping level is found to vary systematically with the growth temperature. In these disordered self-doped materials we observe a large nonlinear component in the Hall effect at low temperatures. The close scaling between the Hall data and the magnetization implies that this effect is an anomalous Hall effect rather than a change of carrier concentration with magnetic field. The extracted anomalous Hall coefficient is found to scale linearly with the resistivity, indicating that it is due to skew scattering of the conduction electrons by the defects.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher: American Physical Society
ISSN: 1098-0121
Last Modified: 17 Oct 2022 10:09

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