Innovative approach to nanoscale device fabrication and low-temperature nitride film growth

Akhadov, Elshan A., Read, Daniel ORCID: https://orcid.org/0000-0002-4178-4986, Mueller, Alexander H., Murray, Jacqueline and Hoffbauer, Mark A. 2005. Innovative approach to nanoscale device fabrication and low-temperature nitride film growth. Journal of Vacuum Science & Technology B 23 (6) , pp. 3116-3119. 10.1116/1.2130346

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Abstract

Energetic neutral beam lithography/epitaxy (ENABLE) was used for etching very high-aspect-ratio nanoscale structures into polymers and for growing templated AlN films at low temperatures. Various methods were used for masking polymeric films for selective etching by energetic oxygen atoms to fabricate sub-100 nm structures with aspect ratios exceeding 35:1. ENABLE was also utilized for low-temperature growth of AlN into previously etched polymer templates to directly form AlN wires. By taking advantage of the unique processing capabilities of ENABLE, new opportunities for making delicate nanostructures are made possible.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	aluminium compounds; III-V semiconductors; semiconductor epitaxial layers; nanotechnology; etching; semiconductor growth; nanolithography
Publisher:	American Institute of Physics
Last Modified:	17 Oct 2022 10:09
URI:	https://orca.cardiff.ac.uk/id/eprint/7209

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