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Optical properties of excitons in semiconductor quantum wires

Dneprovskii, V., Zhukov, E., Muljarov, Egor ORCID:, Tikhodeev, S and Masumoto, Y 1998. Optical properties of excitons in semiconductor quantum wires. Presented at: 5th International Symposium on Quantum Confinement - Nanostructures, Boston, MA, 2-5 Nov 1998. Published in: Cahay, M. ed. Proceedings of the fifth international symposium on quantum confinement: nanostructures. Electrochemical Society Series (98 (1)) Pennington, NJ: Electrochemical Society, pp. 241-255.

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Spectra of luminescence and linear and nonlinear absorption of semiconductor quantum wires crystallized in a transparent dielectric matrix have been investigated and interpreted in terms of excitonic transitions and filling of the exciton phase space. The calculated energies of excitonic transitions are in qualitative agreement with experimental data. The estimated values of exciton binding energies (>100 meV) in semiconductor quantum wires embedded in dielectric are a factor of several tens higher than in bulk semiconductors. The cause of this increase in the exciton's binding energy is not only dimensional quantization, but also the enhancement of Coulomb interaction, i.e. stronger attraction between electrons and holes owing to the large difference between dielectric constants of semiconductor filament and dielectric matrix.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: absorption-spectra; sommerfeld factors; well wires; transition
Publisher: Electrochemical Society
ISBN: 9781566772136
Last Modified: 28 Oct 2022 08:47

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