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Reducing thermal carrier spreading in InP quantum dot lasers

Kasim, Makarimi, Elliott, Stella, Krysa, Andrey B. and Smowton, Peter Michael ORCID: 2015. Reducing thermal carrier spreading in InP quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21 (6) , 1900306. 10.1109/JSTQE.2015.2403716

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Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0.58In0.42P in the dot upper confining layer have the lowest threshold current densities, 138 A·cm-2 at 300 K, and 235 A·cm-2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper confining layer of GaxIn1-xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at fixed inversion level suggest that increasing x content in GaxIn1-xP increases gain at fixed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is significantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI, samples with x = 0.54, 0.56 and 0.58 would all benefit from reduced effects due to thermal carrier spreading compared to x = 0.52.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISSN: 1077-260X
Funders: EPSRC
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 9 February 2015
Last Modified: 04 May 2023 19:18

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