Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Rogers, Daniel J. ORCID: https://orcid.org/0000-0001-8814-5332 and Lakshmanan, Padmavathi 2015. Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers. Presented at: Applied Power Electronics Conference 2015, Charlotte, North Carolina, USA, 15-19 March 2015. IEEE, pp. 2557-2564. 10.1109/APEC.2015.7104711

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Abstract

This paper presents a low inductance snubber design incorporating a damped DC bus capacitance and multiple RC+RCD cells arranged in two arrays. The design suppresses transient over-voltage peaks seen at the switching transitions in hard-switched, high-frequency switch-mode circuits which are created by an unavoidable interaction between circuit parasitic inductances, IGBT turn-off current slopes and free-wheeling diode reverse recovery currents. The array arrangement allows the use of small surface-mount, ultra-fast diodes by enforcing current sharing between many devices. An industrial application example is presented where the snubber design enables an increase in DC bus voltage from 200 V to 400 V when using 600 V Si IGBT's operated at a switching frequency of 75 kHz.Simulation results are presented and compared to experimental measurements to illustrate the operating principle and effectiveness of the array design.

Item Type:	Conference or Workshop Item (Poster)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	Terms—IGBT modules, snubbers, parasitic inductances, switching transients, switched mode power supplies, surface mounting, RC circuits.
Publisher:	IEEE
Date of First Compliant Deposit:	30 March 2016
Last Modified:	28 Oct 2022 09:05
URI:	https://orca.cardiff.ac.uk/id/eprint/73227

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