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Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

Allford, C. P. ORCID:, Legg, R. E., O'Donnell, R. A., Dawson, P., Missous, M. and Buckle, P. D. ORCID: 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30 (10) , 105035. 10.1088/0268-1242/30/10/105035

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We report the observation of a thermally activated resonant tunnelling feature in the current?voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to the alignment of the n = 1 confined states of the two quantum wells within the active region. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of device transport and charge accumulation as a function of temperature is critical. With rising sample temperature, the tunnelling current of the observed low voltage resonant feature increases in magnitude showing a small negative differential resistance region which is discernible even at 293 K and is unique to multiple barrier devices. This behaviour is not observed in conventional double barrier resonant tunnelling structures where the transmission coefficient at the Fermi energy is predominantly controlled by an electric field, whereas in TBRTS it is strongly controlled by the 2D to 2D state alignment.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0268-1242
Funders: EPSRC
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 13 August 2015
Last Modified: 20 May 2023 22:58

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