The effect of baseband impedance termination on the linearity of GaN HEMTs

Akmal, M., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Bensmida, S., Woodington, S., Carrubba, V., Cripps, Stephen Charles ORCID: https://orcid.org/0000-0002-2258-951X, Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349, Morris, K., Beach, M., McGeehan, J. and Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 2010. The effect of baseband impedance termination on the linearity of GaN HEMTs. Presented at: European Microwave Conference 2010, Paris, France, (561636) pp. 1046-1049.

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Item Type:	Conference or Workshop Item (Paper)
Schools:	Schools > Engineering
Last Modified:	17 Oct 2022 10:21
URI:	https://orca.cardiff.ac.uk/id/eprint/7812

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