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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Roff, C., Benedikt, Johannes ORCID:, Tasker, Paul ORCID:, Wallis, D. J., Hilton, K. P., Maclean, J. O., Hayes, D. G., Uren, Michael John and Martin, T. 2009. Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering. IEEE Transactions of Electron Devices 56 (1) , pp. 13-19. 10.1109/TED.2008.2008674

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This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the ldquokneerdquo region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Current collapse; microwave field-effect transistors (FETs); microwave measurements; semiconductor device modeling
Publisher: IEEE
ISSN: 0018-9383
Last Modified: 17 Oct 2022 10:27

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