Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Roff, C., Benedikt, Johannes, Tasker, Paul, Wallis, D. J., Hilton, K. P., Maclean, J. O., Hayes, D. G., Uren, Michael John and Martin, T. 2009. Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering. IEEE Transactions of Electron Devices 56 (1) , pp. 13-19. 10.1109/TED.2008.2008674

Full text not available from this repository.


This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the ldquokneerdquo region, is observed in both RF waveform and pulsed I-V measurements. The effect is fully reproduced using 2-D physical modeling. The difference in dispersive behaviors has been attributed to the geometry of a trap-induced virtual-gate region and the resulting carrier velocity saturation being overcome by punchthrough effects under high electric fields.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Current collapse; microwave field-effect transistors (FETs); microwave measurements; semiconductor device modeling
Publisher: IEEE
ISSN: 0018-9383
Last Modified: 04 Jun 2017 02:03

Citation Data

Cited 69 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item