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InAsP quantum dot lasers grown by MOVPE

Karomi, Ivan, Smowton, Peter Michael ORCID:, Shutts, Samuel ORCID:, Krysa, Andrey B. and Beanland, Richard 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21) , pp. 27282-27291. 10.1364/OE.23.027282

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We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm−2, compared with 150 Acm−2 for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Optical Society of America
ISSN: 1094-4087
Funders: EPSRC
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 17 September 2015
Last Modified: 07 May 2023 19:30

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