Moreno Rubio, Jorge ![]() ![]() |
Abstract
This article describes the design, realization, and characterization of a set of hybrid medium-power RF power amplifiers, based on a commercial packaged GaN HEMT and developed through a low-cost microstrip process. Two different design solutions suitable for wireless applications are presented: the first, intended for a constant envelope modulation (with reference to the GSM standard) is a Class F amplifier exhibiting at 900 MHz an efficiency of 72% with an output power of 37.5 dBm; the second, optimized for nonconstant envelope signals with high dynamics (with reference to the UMTS WCDMA standard) is a Doherty amplifier showing, at 2.14 GHz, an efficiency higher than 40% at 6 dB of output power back-off with a maximum output power of 40 dBm
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Uncontrolled Keywords: | GaN; power amplifier; microstrip; wireless communications; Doherty |
Publisher: | John Wiley & Sons |
ISSN: | 0895-2477 |
Last Modified: | 01 Nov 2022 09:29 |
URI: | https://orca.cardiff.ac.uk/id/eprint/88095 |
Citation Data
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