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In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates

Orchard, Jonathan R., Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Sobiesierski, Angela, Wu, Jiang, Tang, Mingchu, Chen, Siming, Jiang, Qi, Elliott, Stella, Beanland, Richard, Liu, Huiyun, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Mowbray, David J. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6) , pp. 6196-6202. 10.1364/OE.24.006196

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Abstract

The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance. This is shown to result from an increased efficacy of the dislocation filter layers (DFLs); reducing the density of dislocations that arise at the Si/III-V interface which reach the active region. The addition of two annealing steps gives a greater than three reduction in the room temperature threshold current of a 1.3 μm emitting QD laser on Si. The active region of structures grown on Si have a room temperature residual tensile strain of 0.17%, consistent with cool down from the growth temperature and the different Si and GaAs thermal expansion coefficients. This strain limits the amount of III-V material that can be grown before relaxation occurs.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Optical Society of America
ISSN: 1094-4087
Funders: Engineering and Physical Sciences Research Council
Date of First Compliant Deposit: 30 March 2016
Date of Acceptance: 8 March 2016
Last Modified: 01 Nov 2022 09:36
URI: https://orca.cardiff.ac.uk/id/eprint/88569

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